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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12564

Title: Advantages of InGaN Light-emitting Diodes with GaN-InGaN-GaN Barriers
Authors: Kuo, Yen-Kuang;Wang, Tsun-Hsin;Chang, Jih-Yuan;Tsai, Miao-Chan
Contributors: 物理學系
Date: 2011-08
Issue Date: 2012-07-19T01:49:23Z
Publisher: American Institute of Physics
Abstract: The advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers are studied. The energy band diagrams, carrier concentrations in the quantum wells, radiative recombination rate in the active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results show that the InGaN/GaN-InGaN-GaN light-emitting diode has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams which are favorable for the injection of electrons and holes and uniform distribution of these carriers in the quantum wells.
Relation: Applied Physics Letters, 99(9): 091107
Appears in Collections:[物理學系] 期刊論文

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