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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/12564
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| Title: | Advantages of InGaN Light-emitting Diodes with GaN-InGaN-GaN Barriers |
| Authors: | Kuo, Yen-Kuang;Wang, Tsun-Hsin;Chang, Jih-Yuan;Tsai, Miao-Chan |
| Contributors: | 物理學系 |
| Date: | 2011-08
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| Issue Date: | 2012-07-19T01:49:23Z
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| Publisher: | American Institute of Physics |
| Abstract: | The advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers are studied. The energy band diagrams, carrier concentrations in the quantum wells, radiative recombination rate in the active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results show that the InGaN/GaN-InGaN-GaN light-emitting diode has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams which are favorable for the injection of electrons and holes and uniform distribution of these carriers in the quantum wells. |
| Relation: | Applied Physics Letters, 99(9): 091107 |
| Appears in Collections: | [物理學系] 期刊論文
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