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题名: Advantages of InGaN Light-emitting Diodes with GaN-InGaN-GaN Barriers
作者: Kuo, Yen-Kuang;Wang, Tsun-Hsin;Chang, Jih-Yuan;Tsai, Miao-Chan
贡献者: 物理學系
日期: 2011-08
上传时间: 2012-07-19T01:49:23Z
出版者: American Institute of Physics
摘要: The advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers are studied. The energy band diagrams, carrier concentrations in the quantum wells, radiative recombination rate in the active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results show that the InGaN/GaN-InGaN-GaN light-emitting diode has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams which are favorable for the injection of electrons and holes and uniform distribution of these carriers in the quantum wells.
關聯: Applied Physics Letters, 99(9): 091107
显示于类别:[物理學系] 期刊論文

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