Loading...
|
Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/12567
|
| Title: | Improvement in Electron Overflow of Near-Ultraviolet InGaN LEDs by Specific Design on Last Barrier |
| Authors: | Kuo, Yen-Kuang;Shih, Ya-Hsuan;Tsai, Miao-Chan;Chang, Jih-Yuan |
| Contributors: | 物理學系 |
| Date: | 2011-11
|
| Issue Date: | 2012-07-19T01:49:27Z
|
| Publisher: | IEEE |
| Abstract: | Specific designs on the last barrier of near-ultraviolet InGaN light-emitting diodes are investigated numerically in order to diminish the electron leakage current without sacrificing the injection efficiency of holes. Due to the reduction of electron leakage current, the recombination of electrons and holes in the p-layers is decreased and, thus, more holes can be injected into the active region. The simulation results show that the optical performance and internal quantum efficiency are markedly improved when the last GaN barrier near the p-layers is partially replaced by In0.01Ga0.99N layer and intentionally p-doped. |
| Relation: | IEEE Photonics Technology Letters, 23(21): 1630-1632 |
| Appears in Collections: | [物理學系] 期刊論文
|
Files in This Item:
| File |
Size | Format | |
|---|
| index.html | 0Kb | HTML | 513 | View/Open |
|
All items in NCUEIR are protected by copyright, with all rights reserved.
|
