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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12567

Title: Improvement in Electron Overflow of Near-Ultraviolet InGaN LEDs by Specific Design on Last Barrier
Authors: Kuo, Yen-Kuang;Shih, Ya-Hsuan;Tsai, Miao-Chan;Chang, Jih-Yuan
Contributors: 物理學系
Date: 2011-11
Issue Date: 2012-07-19T01:49:27Z
Publisher: IEEE
Abstract: Specific designs on the last barrier of near-ultraviolet InGaN light-emitting diodes are investigated numerically in order to diminish the electron leakage current without sacrificing the injection efficiency of holes. Due to the reduction of electron leakage current, the recombination of electrons and holes in the p-layers is decreased and, thus, more holes can be injected into the active region. The simulation results show that the optical performance and internal quantum efficiency are markedly improved when the last GaN barrier near the p-layers is partially replaced by In0.01Ga0.99N layer and intentionally p-doped.
Relation: IEEE Photonics Technology Letters, 23(21): 1630-1632
Appears in Collections:[物理學系] 期刊論文

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