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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12578

Title: 應力與氧化層結構對磷化鋁鎵銦650 nm面射型雷射的影響
Authors: 陳俊榮;屠嫚琳;朱漢義;郭艷光;劉柏挺
Contributors: 物理學系
Date: 2003
Issue Date: 2012-07-19T01:49:39Z
Abstract: 本文探討應力與氧化層結構,對適用於中短程光纖通信的磷化鋁鎵銦650 nm面射型雷射特性的影響。研究結果顯示,在量子井中使用+0.33%的壓縮應力之雷射結構,具有最低的臨界電流2.64 mA。如果進一步在p-DBR與n-DBR加入氧化層的設計,其臨界電流可以再降至1.05 mA。
Relation: 2003年台灣光電科技研討會, paper PA2-17, OPT’03 Proceedings III: 110-112
Appears in Collections:[物理學系] 會議論文

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