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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12592

Title: Simulation of 1.3-μm AlGaInAs/InP Strained MQW Lasers
Authors: Hsieh, Shang-Wei;Chen, Hsiu-Fen;Yao, Ming-Wei;Kuo, Yen-Kuang
Contributors: 物理學系
Keywords: Semiconductor lasers;AlGaInAs;Characteristic temperature;Numerical simulation
Date: 2005-01
Issue Date: 2012-07-19T01:49:59Z
Publisher: SPIE
Abstract: Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al0.5In0.5As electron stop layer and an active region consisting of Al0.175Ga0.095In0.73As(6 nm)/Al0.27Ga0.21In0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-�m-long AlGaInAs/InP strained quantum-well laser under study.
Relation: Proceedings of SPIE, 5628: 318-326 (Semiconductor Lasers and Applications II)
Appears in Collections:[物理學系] 會議論文

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