English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 30077062      線上人數 : 895
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12592

題名: Simulation of 1.3-μm AlGaInAs/InP Strained MQW Lasers
作者: Hsieh, Shang-Wei;Chen, Hsiu-Fen;Yao, Ming-Wei;Kuo, Yen-Kuang
貢獻者: 物理學系
關鍵詞: Semiconductor lasers;AlGaInAs;Characteristic temperature;Numerical simulation
日期: 2005-01
上傳時間: 2012-07-19T01:49:59Z
出版者: SPIE
摘要: Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al0.5In0.5As electron stop layer and an active region consisting of Al0.175Ga0.095In0.73As(6 nm)/Al0.27Ga0.21In0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-�m-long AlGaInAs/InP strained quantum-well laser under study.
關聯: Proceedings of SPIE, 5628: 318-326 (Semiconductor Lasers and Applications II)
顯示於類別:[物理學系] 會議論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML493檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋