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NCUEIR > College of Science > Department of Physics > Proceedings >  Item 987654321/12593

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12593

Title: Improvement of Characteristic Temperature for AlGaInP Laser Diodes
Authors: Huang, Man-Fang;Tsai, Meng-Lun;Kuo, Yen-Kuang
Contributors: 物理學系
Keywords: AlGaInP;InGaP;Laser diode;Characteristic temperature;GRIN-SCH
Date: 2005-01
Issue Date: 2012-07-19T01:50:00Z
Publisher: SPIE
Abstract: An optimized 650-nm AlGaInP multiple-quantum-well (MQW) laser, which has a compressively strained graded-index separate confinement heterostructure (GRIN-SCH), with improved characteristic temperature, is described. We theoretically show that the parabolic GRIN-SCH has a better carrier injection and smaller overflow than the conventional step-SCH for the AlGaInP LD under identical optical confinement. We have also calculated the electron distribution in the quantum wells for both GRIN-SCH-4QW and SCH-4QW at high temperature. The results indicate that the electron leakage to the p-cladding layer is greatly reduced if the GRIN-SCH-4QW structure is used. We have also compared the performance of LDs with different GRIN-SCH profiles and found that the parabolic GRIN-SCH is better than linear GRIN-SCH in terms of carrier confinement. We have further demonstrated the performance of AlGaInP LDs with four different structures (4-QW step-SCH, 5-QW step-SCH, 4-QW parabolic-GRIN-SCH and 5-QW parabolic-GRIN-SCH). Both theoretical and experimental results indicate that the laser diode with GRIN-SCH-4QW shows the best laser performance among the three structures. A characteristic temperature of 110 K has been demonstrated.
Relation: Proceedings of SPIE, 5628: 127-134 (Semiconductor Lasers and Applications II)
Appears in Collections:[Department of Physics] Proceedings

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