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題名: | Vegard's Law Deviation in Band Gaps and Bowing Parameters of the Wurtzite III-nitride Ternary Alloys |
作者: | Liou, Bo-Ting;Yen, Sheng-Horng;Kuo, Yen-Kuang |
貢獻者: | 物理學系 |
關鍵詞: | III-nitride semiconductor;Vegard’s law;Lattice constant;Band gap bowing parameter |
日期: | 2005-01
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上傳時間: | 2012-07-19T01:50:04Z
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出版者: | SPIE--The International Society for Optical Engineering |
摘要: | The wurtzite AlxGa1-xN, InxGa1-xN, and AlxIn1-xN alloys are studied by numerical simulation based on first-principles calculations. For AlxGa1-xN the Vegard's law deviation parameter is 0.018 � 0.001 � for the a lattice constant and -0.036 � 0.005 � for the c lattice constant. For InxGa1-xN that is 0.047 � 0.011 � for the a lattice constant and -0.117 � 0.026 for the c lattice constant. For AlxIn1-xN that is 0.063 � 0.014 � for the a lattice constant and -0.160 � 0.015 � for the c lattice constant The results indicate that the band gap bowing parameters obtained with the equilibrium lattice constant and with the lattice constants derived from the Vegard's law are 0.341 � 0.035 eV and 0.351 � 0.043 eV respectively for AlxGa1-xN, 1.782 � 0.076 eV and 1.916 � 0.068 eV respectively for InxGa1-xN, and 3.668 � 0.147 eV and 3.457 � 0.152 eV respectively for AlxIn1-xN. |
關聯: | Proceedings of SPIE, 5628: 296-305 (Semiconductor Lasers and Applications II) |
顯示於類別: | [物理學系] 會議論文
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