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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12600

Title: Effect of Doped GaN Barrier Layer on the Optical and Transport Properties of InGaN/GaN Multiple Quantum-well Light-emitting Diodes
Authors: Chen, Jun-Rong;Wu, Jyh-Lih;Kuo, Yen-Kuang
Contributors: 物理學系
Date: 2005
Issue Date: 2012-07-19T01:50:10Z
Publisher: 中華民國物理學會
Relation: 2005年中華民國物理年會, paper PD-15
Appears in Collections:[物理學系] 會議論文

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