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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/12601
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| Title: | Starined InGaAlAs/AlGaAs active Layers for 850-nm VCSELs |
| Authors: | Chen, Jun-Rong;Lee, Chung-Hsien;Chiu, Chien-Fang;Kuo, Yen-Kuang;Liou, Bo-Ting |
| Contributors: | 物理學系 |
| Keywords: | Numerical simulation;850-nm VCSEL;InGaAlAs;Strained QW |
| Date: | 2005
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| Issue Date: | 2012-07-19T01:50:12Z
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| Abstract: | Abstract：The valence subband structures, optical gain spectra, transparency carrier densities, and transparency
radiative current densities of different compressively strained InGaAlAs quantum wells with Al0.3Ga0.7As barriers are
systematically investigated using a 6×6 k⋅p Hamiltonian including the heavy hole, light hole and spin-orbit
splitting bands. Our calculations show that the maximum optical gain, transparency carrier densities,
transparency radiative current densities, and differential gain of InGaAlAs quantum wells can be enhanced by
introducing more compressive strain in quantum wells. However, the improvement of the characteristics of the
InGaAlAs quantum wells becomes negligible when the compressive strain is higher than approximately 1.5%.
Our simulation results suggest that the compressively strained InGaAlAs quantum wells are suitable for
high-speed 850-nm vertical-cavity surface-emitting lasers. |
| Relation: | 2005年台灣光電科技研討會, paper PA-FR1-073 |
| Appears in Collections: | [物理學系] 會議論文
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