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NCUEIR > College of Science > Department of Physics > Proceedings > Item 987654321/12601

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12601

Title:	Starined InGaAlAs/AlGaAs active Layers for 850-nm VCSELs
Authors:	Chen, Jun-Rong;Lee, Chung-Hsien;Chiu, Chien-Fang;Kuo, Yen-Kuang;Liou, Bo-Ting
Contributors:	物理學系
Keywords:	Numerical simulation;850-nm VCSEL;InGaAlAs;Strained QW
Date:	2005
Issue Date:	2012-07-19T01:50:12Z
Abstract:	Abstract：The valence subband structures, optical gain spectra, transparency carrier densities, and transparency radiative current densities of different compressively strained InGaAlAs quantum wells with Al0.3Ga0.7As barriers are systematically investigated using a 6×6 k⋅p Hamiltonian including the heavy hole, light hole and spin-orbit splitting bands. Our calculations show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAlAs quantum wells can be enhanced by introducing more compressive strain in quantum wells. However, the improvement of the characteristics of the InGaAlAs quantum wells becomes negligible when the compressive strain is higher than approximately 1.5%. Our simulation results suggest that the compressively strained InGaAlAs quantum wells are suitable for high-speed 850-nm vertical-cavity surface-emitting lasers.
Relation:	2005年台灣光電科技研討會, paper PA-FR1-073
Appears in Collections:	[Department of Physics] Proceedings

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