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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/12602
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| Title: | Design and Analysis of 1.3-μm AlGaInAs/InP MQW Layers |
| Authors: | Yen, Sheng-Horng;Yao, Ming-Wei;Horng, Syuan-Huei;Chen, Mei-Ling;Kuo, Yen-Kuang |
| Contributors: | 物理學系 |
| Keywords: | Numerical simulation;AlGaInAs/InP;QW lasers;Strain-compensated structure |
| Date: | 2005
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| Issue Date: | 2012-07-19T01:50:13Z
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| Abstract: | The laser performance of 1.3-μm AlGaInAs/InP laser system with 250-μm cavity length is
investigated with the LASTIP simulation program. The results indicate that the structure with 4 QWs has the
best laser performance. The confinement factors in active region using different GRINSCH structures, linear
GRINSCH and four-step GRINSCH, are discussed and compared. The simulated results indicate that the
structure with linear GRINSCH has the largest confinement factor. It is also found that when the operating
temperature is in a range from 288K to 318K, the characteristic temperature can be increased effectively if a
strain-compensated structure is used. As the tensile strain in barrier increases from 0% to 0.52%, the
characteristic temperature can increase from 77.4K to 120.5K. |
| Relation: | 2005年台灣光電科技研討會, paper PA-FR1-070 |
| Appears in Collections: | [物理學系] 會議論文
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