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http://ir.ncue.edu.tw/ir/handle/987654321/12602
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題名: | Design and Analysis of 1.3-μm AlGaInAs/InP MQW Layers |
作者: | Yen, Sheng-Horng;Yao, Ming-Wei;Horng, Syuan-Huei;Chen, Mei-Ling;Kuo, Yen-Kuang |
貢獻者: | 物理學系 |
關鍵詞: | Numerical simulation;AlGaInAs/InP;QW lasers;Strain-compensated structure |
日期: | 2005
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上傳時間: | 2012-07-19T01:50:13Z
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摘要: | The laser performance of 1.3-μm AlGaInAs/InP laser system with 250-μm cavity length is investigated with the LASTIP simulation program. The results indicate that the structure with 4 QWs has the best laser performance. The confinement factors in active region using different GRINSCH structures, linear GRINSCH and four-step GRINSCH, are discussed and compared. The simulated results indicate that the structure with linear GRINSCH has the largest confinement factor. It is also found that when the operating temperature is in a range from 288K to 318K, the characteristic temperature can be increased effectively if a strain-compensated structure is used. As the tensile strain in barrier increases from 0% to 0.52%, the characteristic temperature can increase from 77.4K to 120.5K. |
關聯: | 2005年台灣光電科技研討會, paper PA-FR1-070 |
顯示於類別: | [物理學系] 會議論文
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