National Changhua University of Education Institutional Repository : Item 987654321/12608
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題名: Investigation of Band Gaps and Bowing Parameters for Zincblende III-nitride Ternary Alloys
作者: Liou, Bo-Ting;Yen, Sheng-Horng;Kuo, Yen-Kuang
貢獻者: 物理學系
關鍵詞: III-nitride semiconductor;Lattice constant;Band gap bowing parameter
日期: 2006-02
上傳時間: 2012-07-19T01:50:24Z
出版者: SPIE--The International Society for Optical Engineering
摘要: The zincblende InxGa1-xN, AlxGa1-xN, and AlxIn1-xN alloys are studied by numerical analysis based on first-principles calculations. The results show that the lattice constant of the three alloys obeys the Vegard's law. For InxGa1-xN the direct band gap bowing parameter obtained with the equilibrium lattice constant is 1.890 � 0.097 eV. For AlxGa1-xN the direct and indirect bowing parameters of 0.574 � 0.034 eV and 0.055 � 0.038 eV are obtained, and there is a direct-indirect crossover near x = 0.56. For AlxIn1-xN the direct and indirect bowing parameters of 3.5694 � 0.028 eV and 0.1953 � 0.054 eV are obtained, and there is a direct-indirect crossover near x = 0.807
關聯: Proceedings of SPIE, 6121: 189-197 (GaN Materials and Devices)
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