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Title: Numerical Study for 1.55-μm AlGaInAs/InP Semiconductor Lasers
Authors: Liou, Bo-Ting;Yen, Sheng-Horng;Yao, Ming-Wei;Chen, Mei-Ling;Kuo, Yen-Kuang;Chang, Shu-Hsuan
Contributors: 物理學系
Date: 2006-10
Issue Date: 2012-07-19T01:50:28Z
Publisher: SPIE--The International Society for Optical Engineering
Abstract: Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K~350 K, 300 K~330 K, and 330 K~350 K, respectively.
Relation: Proceedings of SPIE, 6368: 636814 (Optoelectronic Devices: Physics, Fabrication, and Application III)
Appears in Collections:[Department of Physics] Proceedings

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