National Changhua University of Education Institutional Repository : Item 987654321/12610

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NCUEIR > College of Science > Department of Physics > Proceedings > Item 987654321/12610

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12610

Title:	Numerical Study for 1.55-μm AlGaInAs/InP Semiconductor Lasers
Authors:	Liou, Bo-Ting;Yen, Sheng-Horng;Yao, Ming-Wei;Chen, Mei-Ling;Kuo, Yen-Kuang;Chang, Shu-Hsuan
Contributors:	物理學系
Date:	2006-10
Issue Date:	2012-07-19T01:50:28Z
Publisher:	SPIE--The International Society for Optical Engineering
Abstract:	Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K~350 K, 300 K~330 K, and 330 K~350 K, respectively.
Relation:	Proceedings of SPIE, 6368: 636814 (Optoelectronic Devices: Physics, Fabrication, and Application III)
Appears in Collections:	[Department of Physics] Proceedings

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