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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12613

Title: Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-emitting Diodes
Authors: Chang, Yi-An;Yen, Sheng-Horng;Ko, Tsung-Hsine;Wang, Te-Chung;Lu, Chun-Yi;Kuo, Hao-Chung;Kuo, Yen-Kuang;Lu, Tien-Chang;Wang, Shing-Chung
Contributors: 物理學系
Date: 2006
Issue Date: 2012-07-19T01:50:31Z
Publisher: Optical Society of America
Abstract: A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation
results suggest that optimal performance is obtained when the LED has more than 3 wells and
the AlGaN has Al composition of 19–21%.
Relation: in Conference on Lasers and Electro-Optics (CLEO’06, Long Beach, California) paper JWB 77
Appears in Collections:[物理學系] 會議論文

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