National Changhua University of Education Institutional Repository : Item 987654321/12613
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題名: Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-emitting Diodes
作者: Chang, Yi-An;Yen, Sheng-Horng;Ko, Tsung-Hsine;Wang, Te-Chung;Lu, Chun-Yi;Kuo, Hao-Chung;Kuo, Yen-Kuang;Lu, Tien-Chang;Wang, Shing-Chung
貢獻者: 物理學系
日期: 2006
上傳時間: 2012-07-19T01:50:31Z
出版者: Optical Society of America
摘要: A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation
results suggest that optimal performance is obtained when the LED has more than 3 wells and
the AlGaN has Al composition of 19–21%.
關聯: in Conference on Lasers and Electro-Optics (CLEO’06, Long Beach, California) paper JWB 77
顯示於類別:[物理學系] 會議論文

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