English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20273829      Online Users : 270
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12614

Title: Simulation of InGaN Violet and Ultraviolet Multiple-quantum-well laser Diodes
Authors: Yen, Sheng-Horng;Chen, Bo-Jean;Kuo, Yen-Kuang
Contributors: 物理學系
Date: 2006
Issue Date: 2012-07-19T01:50:33Z
Abstract: Optical properties of the InGaN violet and ultraviolet
multiple-quantum-well laser diodes are numerically studied with a
self-consistent simulation program. Specifically, the performance
of the laser diodes of various active region structures, operating in
a spectral range from 370 to 410 nm, are investigated and
compared. The feasibility of using multiquantum barriers and
doped barriers to improve the laser performance is numerically
evaluated. The characteristic temperatures for the laser diodes
under study will be investigated. Optimization of the structures
for InGaN violet and ultraviolet multiple-quantum-well laser
diodes will be attempted.
Relation: in 6th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD’06, Nanyang Technological University, Singapore), paper MC1
Appears in Collections:[物理學系] 會議論文

Files in This Item:

File SizeFormat
index.html0KbHTML323View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback