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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12614

Title: Simulation of InGaN Violet and Ultraviolet Multiple-quantum-well laser Diodes
Authors: Yen, Sheng-Horng;Chen, Bo-Jean;Kuo, Yen-Kuang
Contributors: 物理學系
Date: 2006
Issue Date: 2012-07-19T01:50:33Z
Abstract: Optical properties of the InGaN violet and ultraviolet
multiple-quantum-well laser diodes are numerically studied with a
self-consistent simulation program. Specifically, the performance
of the laser diodes of various active region structures, operating in
a spectral range from 370 to 410 nm, are investigated and
compared. The feasibility of using multiquantum barriers and
doped barriers to improve the laser performance is numerically
evaluated. The characteristic temperatures for the laser diodes
under study will be investigated. Optimization of the structures
for InGaN violet and ultraviolet multiple-quantum-well laser
diodes will be attempted.
Relation: in 6th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD’06, Nanyang Technological University, Singapore), paper MC1
Appears in Collections:[物理學系] 會議論文

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