National Changhua University of Education Institutional Repository : Item 987654321/12614
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 30022603      在线人数 : 420
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12614

题名: Simulation of InGaN Violet and Ultraviolet Multiple-quantum-well laser Diodes
作者: Yen, Sheng-Horng;Chen, Bo-Jean;Kuo, Yen-Kuang
贡献者: 物理學系
日期: 2006
上传时间: 2012-07-19T01:50:33Z
摘要: Optical properties of the InGaN violet and ultraviolet
multiple-quantum-well laser diodes are numerically studied with a
self-consistent simulation program. Specifically, the performance
of the laser diodes of various active region structures, operating in
a spectral range from 370 to 410 nm, are investigated and
compared. The feasibility of using multiquantum barriers and
doped barriers to improve the laser performance is numerically
evaluated. The characteristic temperatures for the laser diodes
under study will be investigated. Optimization of the structures
for InGaN violet and ultraviolet multiple-quantum-well laser
diodes will be attempted.
關聯: in 6th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD’06, Nanyang Technological University, Singapore), paper MC1
显示于类别:[物理學系] 會議論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML453检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈