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http://ir.ncue.edu.tw/ir/handle/987654321/12621
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| 題名: | Simulation of Deep Ultraviolet Light-emitting Diodes |
| 作者: | Kuo, Yen-Kuang;Yen, Sheng-Horng;Wang, Yu-Wen |
| 貢獻者: | 物理學系 |
| 關鍵詞: | Light-emitting diodes;UV LED;Polarization;Numerical simulation |
| 日期: | 2007-09
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| 上傳時間: | 2012-07-19T01:50:44Z
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| 出版者: | SPIE--The International Society for Optical Engineering |
| 摘要: | Optical characteristics of deep ultraviolet light-emitting diodes with the consideration of spontaneous and piezoelectric polarizations are studied in this article with the APSYS (Advanced Physical Model of Semiconductor Devices) simulation program. The amounts of surface charges caused by different polarizations are calculated and compared. Moreover, the band diagram, carrier distribution, radiative recombination current, and light-current performance curves of the InAlGaN UV LED structures with different polarizations are also discussed and investigated. According to the simulated results, we find that the influence of the spontaneous polarization is more apparent than the piezoelectric polarization on band properties, carrier distribution, radiative recombination and output power in deep UV spectral region. In other words, for nitride materials in deep UV region, the polarization resulted from lattice-mismatch is smaller than that caused by asymmetry of the structure along the c-axis. This conclusion is quite different from the situation of blue InGaN light-emitting diodes. For blue LEDs, the piezoelectric polarization is the dominant polarization mechanism because the lattice mismatch between compound layers is a severe problem for these long-wavelength LED devices. |
| 關聯: | Proceedings of SPIE, 6669: 66691J |
| 顯示於類別: | [物理學系] 會議論文
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