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|Title: ||Investigation of Material Properties for Zincblende AlGaN Alloys Applied in UV LEDs|
|Authors: ||Liou, Bo-Ting;Liu, Chieh-I;Kuo, Yen-Kuang|
|Keywords: ||AlGaN;First-principles;Bulk modulus;Refractive index;Band gap;Bowing parameter|
|Issue Date: ||2012-07-19T01:50:45Z
|Publisher: ||SPIE--The International Society for Optical Engineering|
|Abstract: ||The material properties of zincblende AlxGa1-xN alloys from first-principles calculations are investigated. It is found that|
the bulk moduli of zincblende AlxGa1-xN increase with an increase of aluminum composition x, but the pressure
derivative of bulk modulus decreases with an increase of aluminum composition x. The bulk modulus of 199.82 ± 0.64
GPa for GaN increases to that of 213.03 ± 1.09 GPa for AlN, and the deviation parameter of bulk modulus for
zincblende AlxGa1-xN is 11.18 ± 3.61 GPa. The pressure derivative of bulk modulus of 4.190 ± 0.020 for GaN decreases
to that of 3.589 ± 0.030 for AlN. The refractive indices in the wavelength range of 300−600 nm are also investigated.
The one-Sellmeier-term expression is used for curve-fitting analysis of the refractive index as a function of the
wavelength in the transparent region, and the results should provide for the design and growth of vertical cavity
structures and distributed Bragg reflectors on GaAs substrates. Finally, the direct bowing parameter of 0.446 ± 0.126 eV
and indirect bowing parameter of −0.360 ± 0.242 eV are obtained. There is a direct-indirect crossover near x = 0.654 for
which the band gap energy is 4.573 eV.
|Relation: ||Proceedings of SPIE, 6669: 66691H|
|Appears in Collections:||[物理學系] 會議論文|
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