English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6498/11670
Visitors : 27710493      Online Users : 209
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
Login ‧ Upload ‧ Help ‧ About ‧ Administer

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12635

Title: Utilization of Polar-matched AlInGaN Electron-blocking Layer in 405-nm InGaN-based Laser Diodes
Authors: Lu, Ying-Chung;Tsai, Miao-Chan;Chen, Mei-Ling;Kuo, Yen-Kuang
Contributors: 物理學系
Date: 2008
Issue Date: 2012-07-19T01:51:10Z
Relation: 2008年台灣光電科技研討會, paper Sat-P2-184
Appears in Collections:[物理學系] 會議論文

Files in This Item:

There are no files associated with this item.



All items in NCUEIR are protected by copyright, with all rights reserved.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback