English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6498/11670
Visitors : 27731194      Online Users : 220
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12641

Title: Numerical Investigation of Blue InGaN Light-emitting Diodes with Staggered Quantum Wells
Authors: Liou, Bo-Ting;Tsai, Miao-Chan;Liao, Chih-Teng;Yen, Sheng-Horng;Kuo, Yen-Kuang
Contributors: 物理學系
Keywords: Light-emitting diode;InGaN;Piezoelectric effect;Numerical simulation
Date: 2009-01
Issue Date: 2012-07-19T01:51:20Z
Publisher: SPIE--The International Society for Optical Engineering
Abstract: Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW are numerically investigated in this article by using APSYS simulation program. Specifically, band diagram, carrier distribution, and output power have been discussed. According to the simulation results, the structure of staggered QW is proposed to reduce the polarization-related effect; furthermore, the staggered QW structure together with thinner well width is beneficial for improvement of the output power of the blue InGaN SQW LEDs. In this work, the best optical performance is obtained when the quantum-well structure is designed as In0.20Ga0.80N (0.9 nm)-In0.26Ga0.74N (1.1 nm) owing mainly to the enhanced overlap of electron and hole wavefunctions inside the QW.
Relation: Proceedings of SPIE, 7211: 72111D (Physics and Simulation of Optoelectronic Devices XVII)
Appears in Collections:[物理學系] 會議論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback