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http://ir.ncue.edu.tw/ir/handle/987654321/12655
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| 題名: | Effect of Last Barrier on the Optical Performance of Violet Light-emitting Diodes |
| 作者: | Chang, Shu-Jeng;Tsai, Miao-Chan;Kuo, Yen-Kuang |
| 貢獻者: | 物理學系 |
| 日期: | 2010
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| 上傳時間: | 2012-07-19T01:51:47Z
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| 出版者: | 中華民國物理學會 |
| 摘要: | In this work, the optical performance of the violet InGaN light-emitting diodes with different last
barrier thicknesses is investigated by using the APSYS simulation program. Specifically, the light
output power, carrier concentrations in the quantum wells, recombination rates, and electron
overflow are studied. The simulation results show that the optical properties of the violet InGaN
light-emitting diode with a thinner last barrier are effectively improved, because the use of a
thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into
more quantum wells within the active region. When more holes inject into the active region, the
light-emitting diode is capable of reducing the leakage electrons from the active region to the p-side
layers. Therefore, the radiative recombination and output power are enhanced accordingly when
the thinner last barrier is utilized. |
| 關聯: | 2010年中華民國物理年會 |
| 顯示於類別: | [物理學系] 會議論文
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