English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6487/11649
Visitors : 28578717      Online Users : 344
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
Login ‧ Upload ‧ Help ‧ About ‧ Administer

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12663

Title: Numerical Study on Efficiency Droop of Blue InGaN Light-emitting Diodes
Authors: Kuo, Yen-Kuang;Chang, Jih-Yuan;Chen, Jen-De
Contributors: 物理學系
Date: 2011-01
Issue Date: 2012-07-19T01:52:02Z
Publisher: Society of Photo-Optical Instrumentation Engineers (SPIE)
Abstract: Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.
Relation: Proceedings of SPIE, 7933: 793317 (Physics and Simulation of Optoelectronic Devices XIX)
Appears in Collections:[物理學系] 會議論文

Files in This Item:

File SizeFormat
2020200616023.pdf6KbAdobe PDF485View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback