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題名: | Room Temperature Optical Absorption Characteristics of GaAs/AlGaAs Multiple Quantum Well Structures Under External Anisotropic Strain |
作者: | Huang, Man-Fang;Elsa Garmire;Afshin Partovi;Hong, Minghwei |
貢獻者: | 光電科技研究所 |
日期: | 1995-02
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上傳時間: | 2012-08-07T06:16:45Z
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出版者: | American Institute of Physics |
摘要: | We report the room temperature anisotropic absorption characteristics of a GaAs/AlGaAs multiple quantum well structure under biaxial anisotropic strain that was achieved by bonding to an x‐cut LiTaO3 substrate at 150 °C, with the [110] and [110] directions of the multiple quantum well along the y and z axes of LiTaO3, respectively. A stronger heavy hole excitonic feature can be observed when the polarization of the incident light is in the compression direction, which thus results in larger quantum confined Stark effect. An absorption coefficient change of 0.6 μm-1 was observed for an applied field of 7.4 V/μm. This change in absorption coefficient is 1.5 times the value obtainable from a multiple quantum well without strain. © 1995 American Institute of Physics. |
關聯: | Applied Physics Letters, 66(6): 736-738 |
顯示於類別: | [光電科技研究所] 期刊論文
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