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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13118

Title: InAs/GaAs Short-period Strained-layer Superlattices Grown on GaAs as Spatial Light Modulators: Uniformity Measurements
Authors: Huang, Man-Fang;Elsa Garmire;Tom Hasenberg;Steffen Koehler
Contributors: 光電科技研究所
Date: 1997-03
Issue Date: 2012-08-07T06:16:57Z
Publisher: Academic Press.
Abstract: Optical properties of two-dimensional transmission-type spatial light modulators using InAs/GaAs short-period strained-layer superlattices (SPSLSs) in quantum wells, which operate near 960 nm, are investigated. The absorption characteristics of the individual pixels across a ∼200 pixellated wafer, i.e. the uniformity of the devices, are analyzed. The limits to performance of this spatial light modulator due to nonuniformity are also discussed.
Relation: Superlattice and Microstructures, 21(2): 165-176
Appears in Collections:[光電科技研究所] 期刊論文

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