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Title: AlGaInP/AuBe/glass Light-emitting Diodes Fabricated by Wafer Bonding Technology
Authors: Horng, R. H.;Wuu, D. S.;Wei, S. C.;Huang, Man-Fang;Chang, K. H.;Liu, P. H.;Lin, K. C.
Contributors: 光電科技研究所
Date: 1999-07
Issue Date: 2012-08-07T06:17:13Z
Publisher: American Institute of Physics
Abstract: An AlGaInP/AuBe/glass light-emitting diode (LED) was fabricated by a wafer bonding technique. The AlGaInP LED was grown on a temporary GaAs substrate by metalorganic vapor phase epitaxy. By bonding the AuBe/glass substrate on top of epitaxial layers, the temporary GaAs substrate was removed. The luminance of this wafer-bonded device is about 3050 cd/m2 (600 nm wavelength) at an operating current of 20 mA. It is about three times brighter than a conventional device with an absorbing GaAs substrate. This could be due to the fact that the AuBe/glass substrate serves as a reflective mirror, improving the light extraction efficiency. � 1999 American Institute of Physics.
Relation: App. Phys. Lett., 75(2): 154-156
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

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