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题名: AlGaInP Light-emitting Diodes with Mirror Substrate Fabricated by Wafer Bonding
作者: Horng, R. H.;Wuu, D. S.;Wei, S. C.;Tseng, C. Y.;Huang, Man-Fang;Chang, K. H.;Liu, P. H.;Lin, K. C.
贡献者: 光電科技研究所
日期: 1999-11
上传时间: 2012-08-07T06:17:17Z
出版者: American Institute of Physics
摘要: An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated using wafer bonding. The bonded mirror-substrate LED is capable of emitting luminous intensity of 90 and 205 mcd under 20 and 50 mA injection, respectively. The emission wavelength was found to be independent of the injection current. This feature is attributed to the Si substrate providing a good heat sink. � 1999 American Institute of Physics.
關聯: App. Phys. Lett., 75(20): 3054-3056
显示于类别:[光電科技研究所] 期刊論文


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