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题名: Wafer-Bonded AlGaInP/Au/AuBe/SiO2/Si Light-Emitting Diodes
作者: Horng, Ray-Hua;Wuu, Dong-Sing;Wei, Sun-Chin;Tseng, Chung-Yang;Huang, Man-Fang;Chang, Kuo-Hsiung;Liu, Pin-Hui;Lin, Kun-Chuan
贡献者: 光電科技研究所
关键词: AIGalnP;LED;Mirror substrate;Wafer bonding;Absorbed-substrate;Joule heatin
日期: 2000-04
上传时间: 2012-08-07T06:17:20Z
出版者: The Japan Society of Applied Physics
摘要: An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been successfully fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is clearly far superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (≤1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of less than 2 V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I–V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs.
關聯: Jpn. J. App. Phys., 39(4B): 2357-2359
显示于类别:[光電科技研究所] 期刊論文


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