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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13125

Title: Absorption Anisotropy for Lattice Matched GaAs/AlGaAs Multiple Quantum Well Structures under External Anisotropic Biaxial Strain: Compression Along [110] and Tension Along [110]
Authors: Huang, Man-Fang;Elsa Garmire;Kuo, Yen-Kuang
Contributors: 光電科技研究所
Keywords: Theoretical study;Absorption anisotropy;GaAs/AIGaAs;Multiple quantum well;Biaxial strain
Date: 2000-04
Issue Date: 2012-08-07T06:17:24Z
Publisher: The Japan Society of Applied Physics
Abstract: We report theoretical studies on the optical absorption anisotropy for excitonic transitions in lattice-matched GaAs/AlGaAs multiple quantum well (MQW) structures under simultaneous compression and tension applied along the [110] and [110] directions of the MQW, respectively. The analyses are based on a model that includes both the 4�4 k�p Hamiltonian and the strain Hamiltonian. The wave functions, found by solving the eigenvalue equations, are used to calculate the dipole matrix elements for excitonic transitions and evaluate the anisotropic absorption properties. The effect of variation of parameters such as well width and barrier height on the performance of the strained GaAs/AlGaAs MQW electroabsorption modulators is discussed.
Relation: Jpn. J. App. Phys., 39(4A): 1776-1781
Appears in Collections:[光電科技研究所] 期刊論文

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