English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 24743205      Online Users : 69
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13126

Title: Wafer Bonding of 50-mm-Diameter Mirror Substrates to AlGaInP Light-Emitting Diode Wafers
Authors: Horng, R. H.;Wuu, D. S.;Seieh, C. H.;Peng, W. C.;Huang, Man-Fang;Tsai, S. J.;Liu, J. S.
Contributors: 光電科技研究所
Keywords: Wafer bonding;AlGaInP;Mirror substrates;Light-emitting diode (LED)
Date: 2001
Issue Date: 2012-08-07T06:17:25Z
Publisher: SpringerLink
Abstract: The feasibility of bonding 50-mm-diameter Si with a Au/AuBe mirror to AlGaInP
light-emitting diode (LED) wafers is demonstrated. Wafer bonding over the
entire wafer area is achieved while the metallic mirror still maintains high
reflectivity. Using this technique, the mirror-substrate AlGaInP LEDs are
fabricated across an entire 50-mm wafer. The test data show that 98% of the dice
with operating voltages <2.2 V at 20 mA and 85% of the dice with luminous
intensity in the 130~140 mcd region. The wafer-bonded mirror-substrate LED
lamps operating at 626 nm can emit 3 lm at 20 mA with a forward voltage of 2
V, corresponding to a luminous efficiency of 74 lm/W. Moreover, they present a
peak power efficiency of 21% with 4 mW output at 10 mA (1.9 V). Essentially no
degradation is observed for these LEDs after 2000 h stress at 80∞C and 50 mA
(55.6 A/cm2). The results indicate the mirror-substrate AlGaInP LEDs of highly
reliable and efficient performance.
Relation: J. of Electronic Materials, 30(8): 907-910
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML565View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback