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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/13126

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13126

Title:	Wafer Bonding of 50-mm-Diameter Mirror Substrates to AlGaInP Light-Emitting Diode Wafers
Authors:	Horng, R. H.;Wuu, D. S.;Seieh, C. H.;Peng, W. C.;Huang, Man-Fang;Tsai, S. J.;Liu, J. S.
Contributors:	光電科技研究所
Keywords:	Wafer bonding;AlGaInP;Mirror substrates;Light-emitting diode (LED)
Date:	2001
Issue Date:	2012-08-07T06:17:25Z
Publisher:	SpringerLink
Abstract:	The feasibility of bonding 50-mm-diameter Si with a Au/AuBe mirror to AlGaInP light-emitting diode (LED) wafers is demonstrated. Wafer bonding over the entire wafer area is achieved while the metallic mirror still maintains high reflectivity. Using this technique, the mirror-substrate AlGaInP LEDs are fabricated across an entire 50-mm wafer. The test data show that 98% of the dice with operating voltages <2.2 V at 20 mA and 85% of the dice with luminous intensity in the 130~140 mcd region. The wafer-bonded mirror-substrate LED lamps operating at 626 nm can emit 3 lm at 20 mA with a forward voltage of 2 V, corresponding to a luminous efficiency of 74 lm/W. Moreover, they present a peak power efficiency of 21% with 4 mW output at 10 mA (1.9 V). Essentially no degradation is observed for these LEDs after 2000 h stress at 80∞C and 50 mA (55.6 A/cm2). The results indicate the mirror-substrate AlGaInP LEDs of highly reliable and efficient performance.
Relation:	J. of Electronic Materials, 30(8): 907-910
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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