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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/13128

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13128

Title:	Optimization of Active Layer Structures to Minimize Leakage Current for AlGaInP Laser Diode
Authors:	Huang, Man-Fang;Tsai, M. L.;Shin, J. Y.;Sun, Y. L.;Yang, R. M.;Kuo, Y. K.
Contributors:	光電科技研究所
Date:	2005
Issue Date:	2012-08-07T06:17:32Z
Publisher:	SpringerLink
Abstract:	Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP laser diode. An active layer with five quantum wells and a (AlxGa1−x)InP barrier with an x composition of 0.5 has found to be the optimal structure for the AlGaInP laser diode suitable for DVD-ROM and DVD player. Experimental results have confirmed that the characteristic temperature can be as high as 110 K at far field angles of 29◦/9◦ for this optimized AlGaInP laser diode.
Relation:	Applied Physics A: Materials Science & Processing, 81(7): 1369-1373
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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