National Changhua University of Education Institutional Repository : Item 987654321/13129

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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/13129

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13129

Title:	Optimization of Barrier Structure for Strain-Compensated Multiple-Quantum-Well AlGaInP Laser Diodes
Authors:	Huang, Man-Fang;Sun, Yu-Lung
Contributors:	光電科技研究所
Keywords:	AlGaInP;Laser diode;Strain-compensated;Simulation;Optimization
Date:	2006
Issue Date:	2012-08-07T06:17:33Z
Publisher:	The Japan Society of Applied Physics
Abstract:	A theoretical analysis of a strain-compensated multiple-quantum-well (MQW) AlGaInP laser diode (LD) has been conducted to minimize the operation current and enhance the operation temperature. The effect of the barrier height on the tensile-strain quantum barriers was studied under the same optical confinement and emission wavelength. The simulation results suggest that a more uniform and higher carrier distribution inside the MQW region can be obtained for a lower barrier height owing to the improvement in carrier injection. The performance of the AlGaInP LD is thus improved. However, when the barrier height is too small, higher spontaneous rates in the quantum barrier region deteriorate the LD performance instead. Theoretical analysis shows that an Al composition of 0.1 for the 0.5%-tensile-strain AlxGayIn1-x-yP barrier is the optimal value for strain-compensated MQW AlGaInP LDs.
Relation:	Japanese Journal of Applied Physics, 45(10A): 7600-7604
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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