National Changhua University of Education Institutional Repository : Item 987654321/13129
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題名: Optimization of Barrier Structure for Strain-Compensated Multiple-Quantum-Well AlGaInP Laser Diodes
作者: Huang, Man-Fang;Sun, Yu-Lung
貢獻者: 光電科技研究所
關鍵詞: AlGaInP;Laser diode;Strain-compensated;Simulation;Optimization
日期: 2006
上傳時間: 2012-08-07T06:17:33Z
出版者: The Japan Society of Applied Physics
摘要: A theoretical analysis of a strain-compensated multiple-quantum-well (MQW) AlGaInP laser diode (LD) has been conducted to minimize the operation current and enhance the operation temperature. The effect of the barrier height on the tensile-strain quantum barriers was studied under the same optical confinement and emission wavelength. The simulation results suggest that a more uniform and higher carrier distribution inside the MQW region can be obtained for a lower barrier height owing to the improvement in carrier injection. The performance of the AlGaInP LD is thus improved. However, when the barrier height is too small, higher spontaneous rates in the quantum barrier region deteriorate the LD performance instead. Theoretical analysis shows that an Al composition of 0.1 for the 0.5%-tensile-strain AlxGayIn1-x-yP barrier is the optimal value for strain-compensated MQW AlGaInP LDs.
關聯: Japanese Journal of Applied Physics, 45(10A): 7600-7604
顯示於類別:[光電科技研究所] 期刊論文

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