Please use this identifier to cite or link to this item:
|Title: ||Optimization of the Active-Layer Structure for the Deep-UV AlGaN Light-Emitting Diodes|
|Authors: ||Huang, Man-Fang;Lu, Tsung-Hung|
|Keywords: ||AlGaN;Band structure;Carrier distribution;Light-emitting diode (LED);Numerical simulation;Polarization effect|
|Issue Date: ||2012-08-07T06:17:34Z
|Abstract: ||The dependence of the active-layer structure on the|
performance of the deep-UV AlGaN light-emitting diodes (LEDs)
was theoretically investigated with an APSYS simulation program.
Several structure parameters such as well width, well number, barrier
height, barrier width, and doping type were employed to study
howthese parameters change the band structures as well as the carrier
distributions. The band offset and bowing parameter used in
the theoretical analysis were extracted from the experimental results.
Theoretical analysis shows that the nonuniform carrier distributions
as well as the low hole concentrations, which caused by
polarization-induced tilted band structures, play important roles
in improving the performance of the AlGaN LEDs. Compensating
this asymmetric band structure and increasing the hole density are
the important keys to improve the AlGaN LED performance. Numerical
simulation results suggest that the higher output power can
be obtained when the active layer consists of only one quantum well
with a width of 1–3 nm and two thicker n-doped barriers with a
small Al composition.
|Relation: ||IEEE Journal of Quantum Electronics, 42(8): 820-826|
|Appears in Collections:||[光電科技研究所] 期刊論文|
Files in This Item:
All items in NCUEIR are protected by copyright, with all rights reserved.