資料載入中.....
|
請使用永久網址來引用或連結此文件:
http://ir.ncue.edu.tw/ir/handle/987654321/13130
|
| 題名: | Optimization of the Active-Layer Structure for the Deep-UV AlGaN Light-Emitting Diodes |
| 作者: | Huang, Man-Fang;Lu, Tsung-Hung |
| 貢獻者: | 光電科技研究所 |
| 關鍵詞: | AlGaN;Band structure;Carrier distribution;Light-emitting diode (LED);Numerical simulation;Polarization effect |
| 日期: | 2006-08
|
| 上傳時間: | 2012-08-07T06:17:34Z
|
| 出版者: | IEEE |
| 摘要: | The dependence of the active-layer structure on the
performance of the deep-UV AlGaN light-emitting diodes (LEDs)
was theoretically investigated with an APSYS simulation program.
Several structure parameters such as well width, well number, barrier
height, barrier width, and doping type were employed to study
howthese parameters change the band structures as well as the carrier
distributions. The band offset and bowing parameter used in
the theoretical analysis were extracted from the experimental results.
Theoretical analysis shows that the nonuniform carrier distributions
as well as the low hole concentrations, which caused by
polarization-induced tilted band structures, play important roles
in improving the performance of the AlGaN LEDs. Compensating
this asymmetric band structure and increasing the hole density are
the important keys to improve the AlGaN LED performance. Numerical
simulation results suggest that the higher output power can
be obtained when the active layer consists of only one quantum well
with a width of 1–3 nm and two thicker n-doped barriers with a
small Al composition. |
| 關聯: | IEEE Journal of Quantum Electronics, 42(8): 820-826 |
| 顯示於類別: | [光電科技研究所] 期刊論文
|
文件中的檔案:
| 檔案 |
大小 | 格式 | 瀏覽次數 |
|---|
| index.html | 0Kb | HTML | 578 | 檢視/開啟 |
|
在NCUEIR中所有的資料項目都受到原著作權保護.
|
