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題名: | Effect of Polarization State on Optical Properties of Blue-violet InGaN Light-emitting Diodes |
作者: | Kuo, Yen-Kuang;Horng, Syuan-Huei;Yen, Sheng-Horng;Tsai, Miao-Chan;Huang, Man-Fang |
貢獻者: | 光電科技研究所 |
日期: | 2009
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上傳時間: | 2012-08-07T06:17:49Z
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出版者: | SpringerLink |
摘要: | The optical properties of blue-violet InGaN lightemitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turnon voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region. |
關聯: | Applied Physics A: Materials Science & Processing, 98(3): 509-515 |
顯示於類別: | [光電科技研究所] 期刊論文
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