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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/13132
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| Title: | Effect of Polarization State on Optical Properties of Blue-violet InGaN Light-emitting Diodes |
| Authors: | Kuo, Yen-Kuang;Horng, Syuan-Huei;Yen, Sheng-Horng;Tsai, Miao-Chan;Huang, Man-Fang |
| Contributors: | 光電科技研究所 |
| Date: | 2009
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| Issue Date: | 2012-08-07T06:17:49Z
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| Publisher: | SpringerLink |
| Abstract: | The optical properties of blue-violet InGaN lightemitting
diodes under normal and reversed polarizations are
numerically studied. The best light-emitting performance
under normal and reversed polarization is obtained in a
single quantum-well structure and double quantum-well
structure, respectively. The key factors responsible for these
phenomena are presumably the carrier concentration distribution
and the amount of carriers in quantum wells. The turnon
voltage of light-emitting diodes under reversed polarization
is lower than that of light-emitting diodes under normal
polarization, due mainly to lower potential heights for electrons
and holes in the active region. |
| Relation: | Applied Physics A: Materials Science & Processing, 98(3): 509-515 |
| Appears in Collections: | [光電科技研究所] 期刊論文
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