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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13132

Title: Effect of Polarization State on Optical Properties of Blue-violet InGaN Light-emitting Diodes
Authors: Kuo, Yen-Kuang;Horng, Syuan-Huei;Yen, Sheng-Horng;Tsai, Miao-Chan;Huang, Man-Fang
Contributors: 光電科技研究所
Date: 2009
Issue Date: 2012-08-07T06:17:49Z
Publisher: SpringerLink
Abstract: The optical properties of blue-violet InGaN lightemitting
diodes under normal and reversed polarizations are
numerically studied. The best light-emitting performance
under normal and reversed polarization is obtained in a
single quantum-well structure and double quantum-well
structure, respectively. The key factors responsible for these
phenomena are presumably the carrier concentration distribution
and the amount of carriers in quantum wells. The turnon
voltage of light-emitting diodes under reversed polarization
is lower than that of light-emitting diodes under normal
polarization, due mainly to lower potential heights for electrons
and holes in the active region.
Relation: Applied Physics A: Materials Science & Processing, 98(3): 509-515
Appears in Collections:[光電科技研究所] 期刊論文

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