National Changhua University of Education Institutional Repository : Item 987654321/13132
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6487/11649
Visitors : 28507985      Online Users : 402
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Effect of Polarization State on Optical Properties of Blue-violet InGaN Light-emitting Diodes
Authors: Kuo, Yen-Kuang;Horng, Syuan-Huei;Yen, Sheng-Horng;Tsai, Miao-Chan;Huang, Man-Fang
Contributors: 光電科技研究所
Date: 2009
Issue Date: 2012-08-07T06:17:49Z
Publisher: SpringerLink
Abstract: The optical properties of blue-violet InGaN lightemitting
diodes under normal and reversed polarizations are
numerically studied. The best light-emitting performance
under normal and reversed polarization is obtained in a
single quantum-well structure and double quantum-well
structure, respectively. The key factors responsible for these
phenomena are presumably the carrier concentration distribution
and the amount of carriers in quantum wells. The turnon
voltage of light-emitting diodes under reversed polarization
is lower than that of light-emitting diodes under normal
polarization, due mainly to lower potential heights for electrons
and holes in the active region.
Relation: Applied Physics A: Materials Science & Processing, 98(3): 509-515
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback