National Changhua University of Education Institutional Repository : Item 987654321/13147

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 30414699 Online Users : 344

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Proceedings > Item 987654321/13147

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13147

Title:	Wafer-bonded InGaAlP/AuBe/glass Light-emitting Diodes
Authors:	Horng, R. H.;Wuu, D. S.;Tseng, H. W.;Wei, S. C.;Huang, Man-Fang;Chang, K. H.;Liu, P. H.;Lin, K. C.
Contributors:	光電科技研究所
Date:	1999
Issue Date:	2012-08-07T06:19:22Z
Publisher:	IEEE
Abstract:	Summary form only given. High-brightness visible light-emitting diodes (LEDs) are becoming increasingly important and have numerous potential applications, such as in the field of optical display systems. The quaternary In0.5(Ga1-xAlx)0.5 P alloys, which are lattice matched to GaAs, have a direct band-gap that ranges from 1.88 to 2.3 eV. InGaAlP is expected to be a promising candidate in high brightness visible LEDs. One of the problems in the InGaAlP LEDs grown on GaAs substrates was a restriction of light extraction efficiency caused by light absorption in the GaAs substrate. The effect of an absorbing layer or substrate can be minimized by two methods: one is growing a Bragg reflector between the standard LED epitaxial layers and the absorbing GaAs substrate, and the other is wafer bonding technology
Relation:	Lasers and Electro-Optics, 1999. CLEO '99, CTuK41: 137-138
Appears in Collections:	[Graduate Institute of Photonics Technologies] Proceedings

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	705	View/Open