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Title: Wafer-bonded InGaAlP/AuBe/glass Light-emitting Diodes
Authors: Horng, R. H.;Wuu, D. S.;Tseng, H. W.;Wei, S. C.;Huang, Man-Fang;Chang, K. H.;Liu, P. H.;Lin, K. C.
Contributors: 光電科技研究所
Date: 1999
Issue Date: 2012-08-07T06:19:22Z
Publisher: IEEE
Abstract: Summary form only given. High-brightness visible light-emitting diodes (LEDs) are becoming increasingly important and have numerous potential applications, such as in the field of optical display systems. The quaternary In0.5(Ga1-xAlx)0.5 P alloys, which are lattice matched to GaAs, have a direct band-gap that ranges from 1.88 to 2.3 eV. InGaAlP is expected to be a promising candidate in high brightness visible LEDs. One of the problems in the InGaAlP LEDs grown on GaAs substrates was a restriction of light extraction efficiency caused by light absorption in the GaAs substrate. The effect of an absorbing layer or substrate can be minimized by two methods: one is growing a Bragg reflector between the standard LED epitaxial layers and the absorbing GaAs substrate, and the other is wafer bonding technology
Relation: Lasers and Electro-Optics, 1999. CLEO '99, CTuK41: 137-138
Appears in Collections:[Graduate Institute of Photonics Technologies] Proceedings

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