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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13148

Title: Experimental and Numerical Study on the Optical Properties of Yellow-green AlGaInP Light Emitting Diodes
Authors: Huang, Man-Fang;Liu, Pin-Hui;Liu, J. S.;Kuo, Yen-Kuang;Huang, Ya-Lien;Horng, Kuo-Kai;Chang, Jih-Yuan;Chang, Yuni;Huang, Hsu-Ching
Contributors: 光電科技研究所
Date: 2000
Issue Date: 2012-08-07T06:19:24Z
Publisher: The International Society for Optical Engineering
Abstract: AlGaInP LEDs with emission wavelengths near 570 nm are important in liquid crystal display backlight application. However, high brightness in this spectral region is difficult to achieve due to the reduction of the radiation efficiency in the high-aluminum-containing active region and the smaller band offset between the active and the cladding region. In order to improve the performance of the 570-nm AlGaInP LEDs, we have grown several wafers with different structure designs and studied the optical properties as functions of the device temperature and the excitation power experimentally with a photoluminescence measurement system and numerically with a commercial Latsip simulation program. Specifically, important factors such as the barrier height in quantum wells, the tensile strain barrier cladding next to the MQW region, the compensated strain in MQW, and the disturbed Bragg reflector are investigated. Good agreement between the experimental and numerical results is observed.
Relation: Proceedings of SPIE, 4078: 595-602
Appears in Collections:[光電科技研究所] 會議論文

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