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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13151

Title: A Study of the Optical Properties of the Yellow-green AlGaInP and the Blue-UV InGaN Semiconductor Materials
Authors: Kuo, Yen-Kuang;Huang, Hsu-Ching;Chang, Jih-Yuan;Chang, Yuni;Horng, Kuo-Kai;Huang, Ya-Lien;Lin, Wen-Wei;Huang, Man-Fang
Contributors: 光電科技研究所
Date: 2000
Issue Date: 2012-08-07T06:19:50Z
Publisher: IEEE
Abstract: In this work, we study the optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials experimentally with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. Specifically, the effects of the aluminum composition in wells of the AlGaInP MQW structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices are investigated. The optical properties of the blue and ultraviolet InGaN quantum well devices have also been investigated. The effects of the indium composition in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are studied numerically with the Lastip simulation program
Relation: In the 13th Annual Lasers and Electro Optics Society Meeting (IEEE/LEOS 2000, Puerto Rico), ThL4: 790-791, Conference Proceedings
Appears in Collections:[光電科技研究所] 會議論文

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