National Changhua University of Education Institutional Repository : Item 987654321/13151
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题名: A Study of the Optical Properties of the Yellow-green AlGaInP and the Blue-UV InGaN Semiconductor Materials
作者: Kuo, Yen-Kuang;Huang, Hsu-Ching;Chang, Jih-Yuan;Chang, Yuni;Horng, Kuo-Kai;Huang, Ya-Lien;Lin, Wen-Wei;Huang, Man-Fang
贡献者: 光電科技研究所
日期: 2000
上传时间: 2012-08-07T06:19:50Z
出版者: IEEE
摘要: In this work, we study the optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials experimentally with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. Specifically, the effects of the aluminum composition in wells of the AlGaInP MQW structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices are investigated. The optical properties of the blue and ultraviolet InGaN quantum well devices have also been investigated. The effects of the indium composition in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are studied numerically with the Lastip simulation program
關聯: In the 13th Annual Lasers and Electro Optics Society Meeting (IEEE/LEOS 2000, Puerto Rico), ThL4: 790-791, Conference Proceedings
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