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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/13154
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| Title: | Characteristics of 850-nm InGaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers |
| Authors: | Chang, Yuni;Kuo, Yen-Kuang;Huang, Man-Fang |
| Contributors: | 光電科技研究所 |
| Date: | 2002
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| Issue Date: | 2012-08-07T06:19:54Z
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| Publisher: | The International Society for Optical Engineering |
| Abstract: | The vertical-cavity surface-emitting lasers (VCSEL) operating in the spectral range near 850 nm usually utilize GaAs/AlGaAs as the active layer materials. In this work, in addition to the traditional unstrained GaAs/AlGaAs semiconductor laser, the characteristics of the strained InGaAs/AlGaAs vertical-cavity surface-emitting laser and the distributed Bragg reflectors (DBR) used in this semiconductor laser are investigated with a PICS3D (abbreviation of Photonic Integrated Circuit Simulator in 3D) simulation program. The simulation results show that the strained InGaAs/AlGaAs VCSEL has a better optical performance than that of the traditional unstrained GaAs/AlGaAs VCSEL. That is, when compared with the unstrained GaAs/AlGaAs quantum well structures, the strained InGaAs/AlGaAs VCSEL has a higher stimulated recombination rate, a lower threshold current, a higher main-side mode suppression ratio, and a higher characteristic temperature, which might be owing to its narrower well width and smaller carrier effective masses. |
| Relation: | Proceeding of SPIE, 4913: 31-38 |
| Appears in Collections: | [光電科技研究所] 會議論文
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Files in This Item:
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Size | Format | |
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| 2020600416014.pdf | 7Kb | Adobe PDF | 763 | View/Open |
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