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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13156

Title: Improvement of Characteristic Temperature for AlGaInP Laser Diodes
Authors: Chu, Jen-Yu;Hung, Cha-Chang;Huang, Man-Fang;Lin, Chau-Yang;Yang, Michael
Contributors: 光電科技研究所
Date: 2003-09
Issue Date: 2012-08-07T06:20:08Z
Publisher: IEEE
Abstract: An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.
Relation: Optoelectronics, Proceedings of the Sixth Chinese Symposium, : 108-111
Appears in Collections:[光電科技研究所] 會議論文

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