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http://ir.ncue.edu.tw/ir/handle/987654321/13156
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| Title: | Improvement of Characteristic Temperature for AlGaInP Laser Diodes |
| Authors: | Chu, Jen-Yu;Hung, Cha-Chang;Huang, Man-Fang;Lin, Chau-Yang;Yang, Michael |
| Contributors: | 光電科技研究所 |
| Date: | 2003-09
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| Issue Date: | 2012-08-07T06:20:08Z
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| Publisher: | IEEE |
| Abstract: | An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved. |
| Relation: | Optoelectronics, Proceedings of the Sixth Chinese Symposium, : 108-111 |
| Appears in Collections: | [光電科技研究所] 會議論文
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