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題名: Improvement of Characteristic Temperature for AlGaInP Laser Diodes
作者: Chu, Jen-Yu;Hung, Cha-Chang;Huang, Man-Fang;Lin, Chau-Yang;Yang, Michael
貢獻者: 光電科技研究所
日期: 2003-09
上傳時間: 2012-08-07T06:20:08Z
出版者: IEEE
摘要: An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.
關聯: Optoelectronics, Proceedings of the Sixth Chinese Symposium, : 108-111
顯示於類別:[光電科技研究所] 會議論文

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