National Changhua University of Education Institutional Repository : Item 987654321/13156
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 24520652      Online Users : 69
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13156

Title: Improvement of Characteristic Temperature for AlGaInP Laser Diodes
Authors: Chu, Jen-Yu;Hung, Cha-Chang;Huang, Man-Fang;Lin, Chau-Yang;Yang, Michael
Contributors: 光電科技研究所
Date: 2003-09
Issue Date: 2012-08-07T06:20:08Z
Publisher: IEEE
Abstract: An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.
Relation: Optoelectronics, Proceedings of the Sixth Chinese Symposium, : 108-111
Appears in Collections:[Graduate Institute of Photonics Technologies] Proceedings

Files in This Item:

File SizeFormat
index.html0KbHTML457View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback