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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13168

Title: Theoretical Analysis for AlGaN Light Emitting Diodes With Different Barrier Structures
Authors: Lu, Tsung-Hung;Huang, Man-Fang
Contributors: 光電科技研究所
Date: 2005
Issue Date: 2012-08-07T06:20:35Z
Publisher: 中華民國物理學會
Abstract: In this paper, theoretical analysis for the performance of the AlGaN light emitting diodes with different barrier heights was studied. Due to the
polarization charges existed at the well-barrier interface, the electrons and holes were separated in spatial. With the rise of the Al composition in the barrier, this polarization effect is enhanced and the electron-hole recombination rates were thus reduced. As a result, the optimum structure for AlGaN LED is to use one QW and the barrier with small Al composition.
Relation: 2005年中華民國物理年會, PD-20: 189
Appears in Collections:[光電科技研究所] 會議論文

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