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題名: Theoretical Analysis for AlGaN Light Emitting Diodes With Different Barrier Structures
作者: Lu, Tsung-Hung;Huang, Man-Fang
貢獻者: 光電科技研究所
日期: 2005
上傳時間: 2012-08-07T06:20:35Z
出版者: 中華民國物理學會
摘要: In this paper, theoretical analysis for the performance of the AlGaN light emitting diodes with different barrier heights was studied. Due to the
polarization charges existed at the well-barrier interface, the electrons and holes were separated in spatial. With the rise of the Al composition in the barrier, this polarization effect is enhanced and the electron-hole recombination rates were thus reduced. As a result, the optimum structure for AlGaN LED is to use one QW and the barrier with small Al composition.
關聯: 2005年中華民國物理年會, PD-20: 189
顯示於類別:[光電科技研究所] 會議論文

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