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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Proceedings > Item 987654321/13168

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13168

Title:	Theoretical Analysis for AlGaN Light Emitting Diodes With Different Barrier Structures
Authors:	Lu, Tsung-Hung;Huang, Man-Fang
Contributors:	光電科技研究所
Date:	2005
Issue Date:	2012-08-07T06:20:35Z
Publisher:	中華民國物理學會
Abstract:	In this paper, theoretical analysis for the performance of the AlGaN light emitting diodes with different barrier heights was studied. Due to the polarization charges existed at the well-barrier interface, the electrons and holes were separated in spatial. With the rise of the Al composition in the barrier, this polarization effect is enhanced and the electron-hole recombination rates were thus reduced. As a result, the optimum structure for AlGaN LED is to use one QW and the barrier with small Al composition.
Relation:	2005年中華民國物理年會, PD-20: 189
Appears in Collections:	[Graduate Institute of Photonics Technologies] Proceedings

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