National Changhua University of Education Institutional Repository : Item 987654321/13168
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29731374      在线人数 : 422
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/13168

题名: Theoretical Analysis for AlGaN Light Emitting Diodes With Different Barrier Structures
作者: Lu, Tsung-Hung;Huang, Man-Fang
贡献者: 光電科技研究所
日期: 2005
上传时间: 2012-08-07T06:20:35Z
出版者: 中華民國物理學會
摘要: In this paper, theoretical analysis for the performance of the AlGaN light emitting diodes with different barrier heights was studied. Due to the
polarization charges existed at the well-barrier interface, the electrons and holes were separated in spatial. With the rise of the Al composition in the barrier, this polarization effect is enhanced and the electron-hole recombination rates were thus reduced. As a result, the optimum structure for AlGaN LED is to use one QW and the barrier with small Al composition.
關聯: 2005年中華民國物理年會, PD-20: 189
显示于类别:[光電科技研究所] 會議論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML432检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈