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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13172

Title: Effect of the Different Position of a Tensile-strained InGaP Electron Stopper Layer for 1.3-μm InGaAsP/InP Strained Multiple Quantum Well Lasers
Authors: Wang, T. J.;Hsin, J. Y.;Huang, Man-Fang
Contributors: 光電科技研究所
Date: 2006
Issue Date: 2012-08-07T06:20:45Z
Publisher: 中華民國物理學會
Relation: 2006年中華民國物理年會, : 280
Appears in Collections:[光電科技研究所] 會議論文

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