English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6481/11653
Visitors : 23357184      Online Users : 198
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13198

Title: Effect of Wetting Layer on A-plane InN with Different Growth Rate
Authors: Lo, Yun-Yo;Huang, Man-Fang;Chiang, Yu-Chia
Contributors: 光電科技研究所
Date: 2011
Issue Date: 2012-08-07T06:21:20Z
Relation: 9th International Conference on Nitride Semiconductors (ICNS-9) PD3: 45
Appears in Collections:[光電科技研究所] 會議論文

Files in This Item:

There are no files associated with this item.



All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback