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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13517

Title: Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers
Authors: Chang, Jih-Yuan;Liou, Bo-Ting;Lin, Han-Wei;Shih, Ya-Hsuan;Chang, Shu-Hsuan;Kuo, Yen-Kuang
Contributors: 工業教育與技術學系
Date: 2011-09
Issue Date: 2012-08-27T09:31:05Z
Publisher: Optical Society of America
Abstract: The impact of the polarization compensation InGaN interlayer between the heterolayers of Ga-face GaN/InGaN p-i-n solar cells is investigated numerically. Because of the enhancement of carrier collection efficiency, the conversion efficiency is improved markedly, which can be ascribed to both the reduction of the polarization-induced electric field in the InGaN absorption layer and the mitigation of potential barriers at heterojunctions. This beneficial effect is more remarkable in situations with higher polarization, such as devices with a lower degree of relaxation or devices with a higher indium composition in the InGaN absorption layer.
Relation: Optics Letters, 36(17): 3500-3502
Appears in Collections:[工業教育與技術學系] 期刊論文

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